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Photo-assisted etching of p-type Si was previously found to occur in a chlorine-containing, Faraday-shielded, inductively coupled plasma (ICP), and this was attributed to the vacuum ultraviolet (VUV) light generated by the plasma. Other causes for the very high etching rates were ruled out, including ion bombardment. In the present study, the substrate in the main Cl₂/Ar ICP was subjected to extra VUV light that was generated in an independently controlled, auxiliary Ar/He ICP in tandem with the main ICP. The ICPs were separated by a tungsten mesh and a bundle of high-aspect-ratio quartz tubes in a honeycomb configuration. There was no measurable perturbation of the main plasma by the auxiliary plasma. The etching rate was found to be enhanced by 11%–51% with the additional VUV light provided by the auxiliary ICP. With absolute measurements of the auxiliary ICP photon flux at the sample surface, as described elsewhere, incredibly large etching yields of 90–240 Si atoms per photon were obtained. It is argued that etching is not a result of electron–hole pair formation but is instead ascribed to a photocatalytic chain reaction.

A new method for absolute measurement of the vacuum ultraviolet (VUV) photon flux at the edge of a plasma is described. The light produced by the plasma was allowed to strike a negatively biased, gold-coated copper substrate remote from the plasma. The resulting photoelectron emission current was measured, and the absolute photon flux was then found from the known photoelectron yield of Au. The method was used to quantify the amount of VUV light produced by an Ar/He inductively coupled plasma (ICP). Strong emissions at 104.82 and 106.67 nm, corresponding to the 1s₂and 1s₄resonant states of Ar, were observed. The maximum, integrated VUV photon flux measured at the remote location was 3.2 × 10¹³ photons/cm² s. This was estimated to correspond to a flux of 5 × 10¹⁵ photons/cm² s at the edge of the ICP, in the range of reported values under similar conditions.